DMT3009LDT-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N-CH 30V 30A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
Part Status: Active
на замовлення 1158000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 24.82 грн |
| 6000+ | 22.76 грн |
| 9000+ | 21.71 грн |
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Технічний опис DMT3009LDT-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 30A 8VDFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 30A, Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V, Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: V-DFN3030-8 (Type K), Part Status: Active.
Інші пропозиції DMT3009LDT-7 за ціною від 23.65 грн до 63.39 грн
| Фото | Назва | Виробник | Інформація |
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DMT3009LDT-7 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 30A 8VDFN Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 (Type K) Part Status: Active |
на замовлення 1159834 шт: термін постачання 21-31 дні (днів) |
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DMT3009LDT-7 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS |
на замовлення 3550 шт: термін постачання 21-30 дні (днів) |
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| DMT3009LDT-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W Case: V-DFN3030-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 80A Drain-source voltage: 30V Drain current: 11A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: -16...20V кількість в упаковці: 3000 шт |
товар відсутній |
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| DMT3009LDT-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 80A; 1.2W Case: V-DFN3030-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 80A Drain-source voltage: 30V Drain current: 11A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: -16...20V |
товар відсутній |