DMT35M4LFDF-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.83 грн |
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Технічний опис DMT35M4LFDF-7 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V U-DFN2020-, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Power Dissipation (Max): 860mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V.
Інші пропозиції DMT35M4LFDF-7 за ціною від 10.23 грн до 38.9 грн
| Фото | Назва | Виробник | Інформація |
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DMT35M4LFDF-7 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V U-DFN2020- Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V |
на замовлення 4455 шт: термін постачання 21-31 дні (днів) |
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DMT35M4LFDF-7 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 3K |
на замовлення 9812 шт: термін постачання 21-30 дні (днів) |
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| DMT35M4LFDF-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.7W Polarisation: unipolar Gate charge: 14.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 11A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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| DMT35M4LFDF-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.7W Polarisation: unipolar Gate charge: 14.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 90A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 11A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET |
товар відсутній |