Технічний опис DMT35M7LFV-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W, Case: PowerDI3333-8, Kind of package: reel; tape, Pulsed drain current: 90A, Mounting: SMD, Drain-source voltage: 30V, Drain current: 61A, On-state resistance: 8.5mΩ, Type of transistor: N-MOSFET, Power dissipation: 1.98W, Polarisation: unipolar, Gate charge: 36nC, Kind of channel: enhanced, Gate-source voltage: ±20V, кількість в упаковці: 3000 шт.
Інші пропозиції DMT35M7LFV-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DMT35M7LFV-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: 90A Mounting: SMD Drain-source voltage: 30V Drain current: 61A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.98W Polarisation: unipolar Gate charge: 36nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 3000 шт |
товар відсутній |
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| DMT35M7LFV-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: 90A Mounting: SMD Drain-source voltage: 30V Drain current: 61A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.98W Polarisation: unipolar Gate charge: 36nC Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |