Продукція > DIODES INCORPORATED > DMT47M2SFVWQ-7

DMT47M2SFVWQ-7 Diodes Incorporated

Name: DMT47M2SFVWQ-7
Brand: Diodes Incorporated
SKU: 4576706-4
Price: 20.99 UAH
Availability: InStock

Виробник: Diodes Incorporated
MOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8/SWP T&R 2K

на замовлення 21502 шт:

термін постачання 21-30 дні (днів)

Кількість	Ціна без ПДВ
6+	60.52 грн
10+	49.12 грн
100+	33.21 грн
500+	28.16 грн
1000+	22.92 грн
2000+	21.59 грн
4000+	20.99 грн

Мінімальне замовлення: 6

Відгуки про товар

Написати відгук

Технічний опис DMT47M2SFVWQ-7 Diodes Incorporated

Description: MOSFET N-CH 40V PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V, Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V, Qualification: AEC-Q101.

Інші пропозиції DMT47M2SFVWQ-7

Назва	Виробник	Інформація	Доступність
DMT47M2SFVWQ-7	Виробник : DIODES INCORPORATED	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт	товар відсутній
DMT47M2SFVWQ-7	Виробник : Diodes Incorporated	Description: MOSFET N-CH 40V PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V Qualification: AEC-Q101	товар відсутній
DMT47M2SFVWQ-7	Виробник : Diodes Incorporated	Description: MOSFET N-CH 40V PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V Qualification: AEC-Q101	товар відсутній
DMT47M2SFVWQ-7	Виробник : DIODES INCORPORATED	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tape Kind of channel: enhanced	товар відсутній