DMWS120H100SM4 Diodes Incorporated

Description: SIC MOSFET BVDSS: >1000V TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37.2A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 15V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 5mA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 1000 V.