Технічний опис DMWSH120H28SM4Q Diodes Inc
Description: SIC MOSFET BVDSS: >1000V TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 28.5mOhm @ 50A, 15V, Power Dissipation (Max): 429W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 17.7mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 156.3 nC @ 15 V.
Інші пропозиції DMWSH120H28SM4Q
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMWSH120H28SM4Q | Виробник : Diodes Incorporated |
Description: SIC MOSFET BVDSS: >1000V TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 28.5mOhm @ 50A, 15V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 17.7mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 156.3 nC @ 15 V |
товар відсутній |
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DMWSH120H28SM4Q | Виробник : Diodes Incorporated | Diodes Inc. SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS |
товар відсутній |