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DTB123ECT116

DTB123ECT116 Rohm Semiconductor

datasheet?p=DTB123EC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Виробник: Rohm Semiconductor
Description: PNP -500MA/-50V DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 379 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+25.8 грн
14+ 19.88 грн
100+ 10.53 грн
Мінімальне замовлення: 12
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Технічний опис DTB123ECT116 Rohm Semiconductor

Description: PNP -500MA/-50V DIGITAL TRANSIST, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V, Supplier Device Package: SST3, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms.

Інші пропозиції DTB123ECT116

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
DTB123ECT116 DTB123ECT116 Виробник : Rohm Semiconductor datasheet?p=DTB123EC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP -500MA/-50V DIGITAL TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
товар відсутній
DTB123ECT116 DTB123ECT116 Виробник : ROHM Semiconductor dtb123ect116-e-1872549.pdf Bipolar Transistors - Pre-Biased PNP -500mA/-50V w/bias resistors
товар відсутній