DTD123ECHZGT116 ROHM Semiconductor
Виробник: ROHM SemiconductorDigital Transistors DTD123ECHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver.
на замовлення 5871 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.97 грн |
| 16+ | 20.04 грн |
| 100+ | 7.21 грн |
| 1000+ | 5.34 грн |
| 3000+ | 4.27 грн |
| 9000+ | 3.67 грн |
| 24000+ | 3.47 грн |
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Технічний опис DTD123ECHZGT116 ROHM Semiconductor
Description: DTD123ECHZG IS THE HIGH RELIABIL, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V, Supplier Device Package: SST3, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms.
Інші пропозиції DTD123ECHZGT116 за ціною від 5.72 грн до 29.61 грн
| Фото | Назва | Виробник | Інформація |
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DTD123ECHZGT116 | Виробник : Rohm Semiconductor |
Description: DTD123ECHZG IS THE HIGH RELIABIL Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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DTD123ECHZGT116 | Виробник : Rohm Semiconductor |
Description: DTD123ECHZG IS THE HIGH RELIABIL Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
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