EM6HE08EW9G-10H

EM6HE08EW9G-10H Etron Technology, Inc.


EM6HE08EW9G_Rev%201.1.pdf Виробник: Etron Technology, Inc.
Description: IC DRAM 4GBIT PAR 78FBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (7.5x10.6)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
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Технічний опис EM6HE08EW9G-10H Etron Technology, Inc.

Description: IC DRAM 4GBIT PAR 78FBGA, Packaging: Tape & Reel (TR), Package / Case: 78-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Gbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 95°C (TC), Voltage - Supply: 1.283V ~ 1.45V, Technology: SDRAM - DDR3L, Clock Frequency: 933 MHz, Memory Format: DRAM, Supplier Device Package: 78-FBGA (7.5x10.6), Part Status: Active, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 20 ns, Memory Organization: 512M x 8, DigiKey Programmable: Not Verified.

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EM6HE08EW9G-10H EM6HE08EW9G-10H Виробник : Etron Technology, Inc. EM6HE08EW9G_Rev%201.1.pdf Description: IC DRAM 4GBIT PAR 78FBGA
Packaging: Cut Tape (CT)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 78-FBGA (7.5x10.6)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
товар відсутній