Технічний опис ES3CHE3_A/H Vishay
Description: DIODE GEN PURP 150V 3A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 45pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 150 V, Qualification: AEC-Q101.
Інші пропозиції ES3CHE3_A/H
| Фото | Назва | Виробник | Інформація |
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ES3CHE3_A/H | Виробник : Vishay |
 Rectifier Diode Switching 150V 3A 20ns Automotive AEC-Q101 2-Pin SMC T/R |
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| ES3CHE3_A/H | Виробник : Vishay |
Rectifier Diode Switching 150V 3A 20ns Automotive 2-Pin SMC T/R |
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ES3CHE3_A/H | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V Qualification: AEC-Q101 |
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ES3CHE3_A/H | Виробник : Vishay General Semiconductor |
Rectifiers 150 Volt 3.0A 20ns Glass Passivated |
товар відсутній |