ES3DSMB DIOTEC SEMICONDUCTOR
Виробник: DIOTEC SEMICONDUCTORCategory: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 115A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Max. load current: 15A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 115A
Leakage current: 5µA
Kind of package: reel; tape
кількість в упаковці: 1 шт
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Технічний опис ES3DSMB DIOTEC SEMICONDUCTOR
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 200V; 3A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 115A, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 200V, Load current: 3A, Max. load current: 15A, Reverse recovery time: 20ns, Semiconductor structure: single diode, Features of semiconductor devices: superfast switching, Case: SMB, Max. forward voltage: 0.9V, Max. forward impulse current: 115A, Leakage current: 5µA, Kind of package: reel; tape, кількість в упаковці: 1 шт.
Інші пропозиції ES3DSMB
| Фото | Назва | Виробник | Інформація |
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ES3DSMB | Виробник : Diotec Semiconductor |
Description: DIODE GEN PURP 200V 3A DO214AA Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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ES3DSMB | Виробник : Diotec Semiconductor |
Rectifiers Diode, Superfast, SMB, 200V, 3A, 150C |
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ES3DSMB | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 115A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Max. load current: 15A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 115A Leakage current: 5µA Kind of package: reel; tape |
товар відсутній |