на замовлення 997 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 764.86 грн |
| 10+ | 681 грн |
| 25+ | 564.8 грн |
| 100+ | 490.7 грн |
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Технічний опис FCP36N60N onsemi / Fairchild
Description: MOSFET N-CH 600V 36A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V, Power Dissipation (Max): 312W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 100 V.
Інші пропозиції FCP36N60N
| Фото | Назва | Виробник | Інформація |
Доступність |
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FCP36N60N | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 600V 36A 3-Pin(3+Tab) TO-220 Tube |
товар відсутній |
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FCP36N60N | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22.7A; 312W; TO220AB Type of transistor: N-MOSFET Technology: SuperMOS® Polarisation: unipolar Drain-source voltage: 600V Drain current: 22.7A Power dissipation: 312W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 81mΩ Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1000 шт |
товар відсутній |
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FCP36N60N | Виробник : onsemi |
Description: MOSFET N-CH 600V 36A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 100 V |
товар відсутній |
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FCP36N60N | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22.7A; 312W; TO220AB Type of transistor: N-MOSFET Technology: SuperMOS® Polarisation: unipolar Drain-source voltage: 600V Drain current: 22.7A Power dissipation: 312W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 81mΩ Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |