FDB045AN08A0_F085 Fairchild Semiconductor
на замовлення 568 шт:
термін постачання 21-31 дні (днів)
Відгуки про товар
Написати відгук
Технічний опис FDB045AN08A0_F085 Fairchild Semiconductor
Description: MOSFET N-CH 75V 19A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V, Power Dissipation (Max): 310W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D²PAK (TO-263), Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції FDB045AN08A0_F085
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
FDB045AN08A0_F085 | Виробник : Fairchild Semiconductor | Description: MOSFET N-CH 75V 19A D2PAK |
на замовлення 568 шт: термін постачання 21-31 дні (днів) |
||
FDB045AN08A0-F085 | Виробник : ON Semiconductor | Trans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
||
FDB045AN08A0-F085 | Виробник : ON Semiconductor | Trans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
||
FDB045AN08A0-F085 | Виробник : ON Semiconductor | Trans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
||
FDB045AN08A0_F085 | Виробник : Fairchild Semiconductor | Description: MOSFET N-CH 75V 19A D2PAK |
товар відсутній |
||
FDB045AN08A0-F085 | Виробник : onsemi |
Description: MOSFET N-CH 75V 19A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
||
FDB045AN08A0-F085 | Виробник : onsemi |
Description: MOSFET N-CH 75V 19A TO263AB Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
||
FDB045AN08A0-F085 | Виробник : onsemi / Fairchild | MOSFET 75V N-CHAN PwrTrench |
товар відсутній |