на замовлення 757 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 161.23 грн |
| 10+ | 132.05 грн |
| 100+ | 91.46 грн |
| 250+ | 84.12 грн |
| 500+ | 80.11 грн |
| 800+ | 65.83 грн |
| 2400+ | 62.09 грн |
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Технічний опис FDB12N50TM onsemi / Fairchild
Description: MOSFET N-CH 500V 11.5A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V, Power Dissipation (Max): 165W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 25 V.
Інші пропозиції FDB12N50TM
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FDB12N50TM | Виробник : onsemi |
 Description: MOSFET N-CH 500V 11.5A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 25 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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FDB12N50TM | Виробник : ON Semiconductor |
Trans MOSFET N-CH 500V 11.5A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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| FDB12N50TM | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Drain-source voltage: 500V Drain current: 6.9A On-state resistance: 0.65Ω Type of transistor: N-MOSFET Power dissipation: 165W Polarisation: unipolar Gate charge: 30nC Technology: DMOS; UniFET™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 46A кількість в упаковці: 1 шт |
товар відсутній |
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FDB12N50TM | Виробник : onsemi |
Description: MOSFET N-CH 500V 11.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 25 V |
товар відсутній |
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| FDB12N50TM | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Drain-source voltage: 500V Drain current: 6.9A On-state resistance: 0.65Ω Type of transistor: N-MOSFET Power dissipation: 165W Polarisation: unipolar Gate charge: 30nC Technology: DMOS; UniFET™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 46A |
товар відсутній |