FDB8444TS ON Semiconductor

Description: MOSFET N-CH 40V 20A/70A TO263-5, Packaging: Tape & Reel (TR), Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 70A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 70A, 10V, Power Dissipation (Max): 181W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-5, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 338 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 25 V.