FDMA291P onsemi
Виробник: onsemi
Description: MOSFET P-CH 20V 6.6A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 6.6A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Description: MOSFET P-CH 20V 6.6A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 6.6A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
на замовлення 340 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
7+ | 46.44 грн |
10+ | 39.77 грн |
100+ | 30.5 грн |
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Технічний опис FDMA291P onsemi
Description: ONSEMI - FDMA291P - Leistungs-MOSFET, p-Kanal, 20 V, 6.6 A, 0.036 ohm, µFET, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 6.6A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 700mV, euEccn: NLR, Verlustleistung: 2.4W, Bauform - Transistor: µFET, Anzahl der Pins: 8Pin(s), Produktpalette: Multicomp Pro RJ45 Adapter, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 700mV, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.036ohm, SVHC: No SVHC (14-Jun-2023).
Інші пропозиції FDMA291P за ціною від 15.32 грн до 49.47 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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FDMA291P | Виробник : onsemi / Fairchild | MOSFET -20V Single P-Ch. PowerTrench MOSFET |
на замовлення 1852 шт: термін постачання 601-610 дні (днів) |
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FDMA291P | Виробник : ONSEMI |
Description: ONSEMI - FDMA291P - Leistungs-MOSFET, p-Kanal, 20 V, 6.6 A, 0.036 ohm, µFET, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 700mV euEccn: NLR Verlustleistung: 2.4W Bauform - Transistor: µFET Anzahl der Pins: 8Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 700mV Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.036ohm SVHC: No SVHC (14-Jun-2023) |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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FDMA291P | Виробник : ONSEMI |
Description: ONSEMI - FDMA291P - Leistungs-MOSFET, p-Kanal, 20 V, 6.6 A, 0.036 ohm, µFET, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 700mV euEccn: NLR Verlustleistung: 2.4W Bauform - Transistor: µFET Anzahl der Pins: 8Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 700mV Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.036ohm SVHC: No SVHC (14-Jun-2023) |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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FDMA291P | Виробник : ON Semiconductor | Trans MOSFET P-CH 20V 6.6A 6-Pin WDFN EP T/R |
товар відсутній |
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+1 |
FDMA291P | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.6A; 2.4W; MicroFET Mounting: SMD Power dissipation: 2.4W Gate charge: 14nC Polarisation: unipolar Technology: PowerTrench® Drain current: -6.6A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: MicroFET On-state resistance: 98mΩ кількість в упаковці: 1 шт |
товар відсутній |
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FDMA291P | Виробник : onsemi |
Description: MOSFET P-CH 20V 6.6A 6MICROFET Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 6.6A, 4.5V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
товар відсутній |
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+1 |
FDMA291P | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.6A; 2.4W; MicroFET Mounting: SMD Power dissipation: 2.4W Gate charge: 14nC Polarisation: unipolar Technology: PowerTrench® Drain current: -6.6A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: MicroFET On-state resistance: 98mΩ |
товар відсутній |