FDMA905P onsemi
Виробник: onsemi
Description: MOSFET P-CH 12V 10A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V
Description: MOSFET P-CH 12V 10A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 36.86 грн |
6000+ | 33.72 грн |
Відгуки про товар
Написати відгук
Технічний опис FDMA905P onsemi
Description: MOSFET P-CH 12V 10A 6MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V, Power Dissipation (Max): 2.4W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-MicroFET (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V.
Інші пропозиції FDMA905P за ціною від 35.69 грн до 89.9 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FDMA905P | Виробник : onsemi |
Description: MOSFET P-CH 12V 10A 6MICROFET Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 4.5V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 3405 pF @ 6 V |
на замовлення 15318 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
FDMA905P | Виробник : onsemi / Fairchild | MOSFET -12V Single P-Chan PowerTrench MOSFET |
на замовлення 700 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||
FDMA905P | Виробник : ON Semiconductor | Trans MOSFET P-CH 12V 10A 6-Pin WDFN EP T/R |
товар відсутній |
||||||||||||||
FDMA905P | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10A; 2.4W; WDFN6 Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar Drain current: -10A Kind of channel: enhanced Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: WDFN6 On-state resistance: 21mΩ кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
FDMA905P | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10A; 2.4W; WDFN6 Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar Drain current: -10A Kind of channel: enhanced Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: WDFN6 On-state resistance: 21mΩ |
товар відсутній |