FDMC4435BZ-F126

FDMC4435BZ-F126 ON Semiconductor / Fairchild


FDMC4435BZ-D-1807336.pdf Виробник: ON Semiconductor / Fairchild
MOSFET -30V P-CH PwrTrench
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термін постачання 21-30 дні (днів)
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Технічний опис FDMC4435BZ-F126 ON Semiconductor / Fairchild

Description: MOSFET P-CH 30V 8.5A/18A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V, Power Dissipation (Max): 2.3W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V.

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FDMC4435BZ-F126 Виробник : ON Semiconductor fdmc4435bz-d.pdf TRANS MOSFET P-CH 30V 8.5A 8-PIN POWER 33 T/R
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FDMC4435BZ-F126 FDMC4435BZ-F126 Виробник : onsemi fdmc4435bz-d.pdf Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
товар відсутній