FDR8508P Fairchild Semiconductor

Description: MOSFET 2P-CH 30V 3A SUPERSOT 8, Packaging: Bulk, Package / Case: 8-TSOP (0.130", 3.30mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3A, Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V, Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SuperSOT™-8, Part Status: Obsolete.