Технічний опис FDS4410A ON Semiconductor
Description: SINGLE N CHANNEL, LOGIC-LEVEL, P, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 15 V.
Інші пропозиції FDS4410A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
FDS4410A | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R |
товар відсутній |
|
 |
FDS4410A | Виробник : Fairchild Semiconductor |
Description: SINGLE N CHANNEL, LOGIC-LEVEL, P Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 15 V |
товар відсутній |
|
 |
FDS4410A | Виробник : onsemi / Fairchild |
MOSFET LOGIC LEVEL PO SINGLE NCH |
товар відсутній |