Технічний опис FDS5690_NBBM009A Fairchild Semiconductor
Description: MOSFET N-CH 60V 7A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1107 pF @ 30 V.
Інші пропозиції FDS5690_NBBM009A
| Фото | Назва | Виробник | Інформація |
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FDS5690_NBBM009A | Виробник : Fairchild Semiconductor |
 Description: MOSFET N-CH 60V 7A 8SOIC |
товар відсутній |
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FDS5690_NBBM009A | Виробник : Fairchild Semiconductor |
Description: MOSFET N-CH 60V 7A 8SOIC |
товар відсутній |
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FDS5690-NBBM009A | Виробник : onsemi |
Description: MOSFET N-CH 60V 7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1107 pF @ 30 V |
товар відсутній |