Технічний опис FF1200R17KE3B2NOSA1 Infineon Technologies
Description: IGBT MODULE 1700V 1200A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1.2kA, NTC Thermistor: No, Supplier Device Package: A-IHV130-3, Current - Collector (Ic) (Max): 1700 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 6600 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 110 nF @ 25 V.
Інші пропозиції FF1200R17KE3B2NOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| FF1200R17KE3B2NOSA1 | Виробник : Infineon Technologies |
 Description: IGBT MODULE 1700V 1200APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1.2kA NTC Thermistor: No Supplier Device Package: A-IHV130-3 Current - Collector (Ic) (Max): 1700 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 6600 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 110 nF @ 25 V |
товар відсутній |