FF150R12MS4GBOSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 225A 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Description: IGBT MOD 1200V 225A 1250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 11383.17 грн |
10+ | 10498.26 грн |
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Технічний опис FF150R12MS4GBOSA1 Infineon Technologies
Description: IGBT MOD 1200V 225A 1250W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Active, Current - Collector (Ic) (Max): 225 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1250 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 11 nF @ 25 V.
Інші пропозиції FF150R12MS4GBOSA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
FF150R12MS4GBOSA1 | Виробник : Infineon Technologies | Trench and Field Stop IGBT Module |
товар відсутній |