Технічний опис FF200R12KE3B2HOSA1 Infineon Technologies
Description: IGBT MOD 1200V 295A 1050W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Active, Current - Collector (Ic) (Max): 295 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1050 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 14 nF @ 25 V.
Інші пропозиції FF200R12KE3B2HOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| FF200R12KE3B2HOSA1 | Виробник : Infineon Technologies | MEDIUM POWER 62MM |
товар відсутній |
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FF200R12KE3B2HOSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 295A 1050W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module Part Status: Active Current - Collector (Ic) (Max): 295 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1050 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V |
товар відсутній |