FF200R12KE4PHOSA1 Infineon Technologies
Виробник: Infineon Technologies62mm C-Series module with fast Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and pre-applied Thermal Interface Material
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис FF200R12KE4PHOSA1 Infineon Technologies
Description: IGBT MODULE 1200V 200A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 14 nF @ 25 V.
Інші пропозиції FF200R12KE4PHOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
FF200R12KE4PHOSA1 | Виробник : Infineon Technologies |
62mm C-Series module with fast Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and pre-applied Thermal Interface Material |
товар відсутній |
|
 |
FF200R12KE4PHOSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A кількість в упаковці: 1 шт |
товар відсутній |
|
 |
FF200R12KE4PHOSA1 | Виробник : Infineon Technologies |
Description: IGBT MODULE 1200V 200A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V |
товар відсутній |
|
 |
FF200R12KE4PHOSA1 | Виробник : Infineon Technologies |
IGBT Modules MEDIUM POWER 62MM |
товар відсутній |
|
|
|
FF200R12KE4PHOSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A |
товар відсутній |