FF200R12KT3EHOSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT MODULE 1200V 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 10022.38 грн |
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Технічний опис FF200R12KT3EHOSA1 Infineon Technologies
Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2, Type of module: IGBT, Semiconductor structure: common emitter; transistor/transistor, Max. off-state voltage: 1.2kV, Case: AG-62MM-1, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Topology: IGBT x2, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 400A, Power dissipation: 1.05kW, кількість в упаковці: 1 шт.
Інші пропозиції FF200R12KT3EHOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
FF200R12KT3EHOSA1 | Виробник : Infineon Technologies |
Trans IGBT Module N-CH 1200V 295A 1050000mW 7-Pin 62MM-1 Tray |
товар відсутній |
|
 |
FF200R12KT3EHOSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Topology: IGBT x2 Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.05kW кількість в упаковці: 1 шт |
товар відсутній |
|
 |
FF200R12KT3EHOSA1 | Виробник : Infineon Technologies |
Trans IGBT Module N-CH 1200V 295A 1050W 7-Pin 62MM-1 Tray |
товар відсутній |
|
|
|
FF200R12KT3EHOSA1 | Виробник : Infineon Technologies |
Description: IGBT MODULE 1200V 1050W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1050 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V |
товар відсутній |
|
|
|
FF200R12KT3EHOSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Topology: IGBT x2 Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.05kW |
товар відсутній |