FF3MR12KM1HHPSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: FF3MR12KM1HHPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V
Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V
Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 112mA
Supplier Device Package: AG-62MMHB
Description: FF3MR12KM1HHPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V
Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V
Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 112mA
Supplier Device Package: AG-62MMHB
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Технічний опис FF3MR12KM1HHPSA1 Infineon Technologies
Description: FF3MR12KM1HHPSA1, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 190A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V, Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V, Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V, Vgs(th) (Max) @ Id: 5.1V @ 112mA, Supplier Device Package: AG-62MMHB.
Інші пропозиції FF3MR12KM1HHPSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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FF3MR12KM1HHPSA1 | Виробник : Infineon Technologies |
 Discrete Semiconductor Modules |
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