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FF900R12IE4PBOSA1 Infineon Technologies

Name: FF900R12IE4PBOSA1
Brand: Infineon Technologies
SKU: 23607236-3
Price: 32619.31 UAH
Availability: InStock

Infineon-FF900R12IE4P-DS-v02_00-EN.pdf?fileId=5546d46253e9fadc0153f07db7274207

Виробник: Infineon Technologies
Description: IGBT MOD 1200V 900A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V

на замовлення 3 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
1+	32619.31 грн

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Технічний опис FF900R12IE4PBOSA1 Infineon Technologies

Description: IGBT MOD 1200V 900A 20MW, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 900A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 900 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 54 nF @ 25 V.