FGH40T120SMDL4

FGH40T120SMDL4 ON Semiconductor


fgh40t120smdl4-d.pdf Виробник: ON Semiconductor
Trans IGBT Chip N-CH 1200V 80A 555000mW 4-Pin(4+Tab) TO-247 Tube
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Технічний опис FGH40T120SMDL4 ON Semiconductor

Description: IGBT TRENCH/FS 1200V 80A TO247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 65 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, Supplier Device Package: TO-247-4, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 44ns/464ns, Switching Energy: 2.24mJ (on), 1.02mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 370 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 555 W.

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FGH40T120SMDL4 FGH40T120SMDL4 Виробник : onsemi fgh40t120smdl4-d.pdf Description: IGBT TRENCH/FS 1200V 80A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-4
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/464ns
Switching Energy: 2.24mJ (on), 1.02mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 370 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 555 W
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FGH40T120SMDL4 FGH40T120SMDL4 Виробник : ON Semiconductor / Fairchild FGH40T120SMDL4_D-2313466.pdf IGBT Transistors FS2 TIGBT excellent swtching performance
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