FP06R12W1T4B3BOMA1 INFINEON TECHNOLOGIES
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Technology: EasyPIM™ 1B
Collector current: 6A
Power dissipation: 94W
Case: AG-EASY1B-1
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A
Technology: EasyPIM™ 1B
Collector current: 6A
Power dissipation: 94W
Case: AG-EASY1B-1
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Type of module: IGBT
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1900.48 грн |
2+ | 1668.31 грн |
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Технічний опис FP06R12W1T4B3BOMA1 INFINEON TECHNOLOGIES
Description: IGBT MODULE 1200V 0 94W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 6A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 94 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 600 pF @ 25 V.
Інші пропозиції FP06R12W1T4B3BOMA1 за ціною від 2078.97 грн до 2563.05 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||
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FP06R12W1T4B3BOMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 6A Technology: EasyPIM™ 1B Collector current: 6A Power dissipation: 94W Case: AG-EASY1B-1 Gate-emitter voltage: ±20V Pulsed collector current: 12A Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
на замовлення 3 шт: термін постачання 7-14 дні (днів) |
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FP06R12W1T4B3BOMA1 | Виробник : Infineon Technologies |
Description: IGBT MODULE 1200V 0 94W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 6A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 94 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 600 pF @ 25 V |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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FP06R12W1T4B3BOMA1 | Виробник : Infineon Technologies | Trans IGBT Module N-CH 1200V 12A 94W 20-Pin EASY1B-1 Tray |
товар відсутній |
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FP06R12W1T4B3BOMA1 | Виробник : Infineon Technologies | Trans IGBT Module N-CH 1200V 12A 94000mW 20-Pin EASY1B-1 Tray |
товар відсутній |