FP25R12W2T4PB11BPSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 50A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Description: IGBT MOD 1200V 50A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
6+ | 3975.83 грн |
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Технічний опис FP25R12W2T4PB11BPSA1 Infineon Technologies
Description: IGBT MOD 1200V 50A 20MW, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V.
Інші пропозиції FP25R12W2T4PB11BPSA1 за ціною від 3332.06 грн до 4830.62 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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FP25R12W2T4PB11BPSA1 | Виробник : Infineon Technologies | IGBT Modules LOW POWER EASY |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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FP25R12W2T4PB11BPSA1 | Виробник : Infineon Technologies | EasyPIM™ module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC/pre-applied Thermal Interface Material |
товар відсутній |
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FP25R12W2T4PB11BPSA1 | Виробник : Infineon Technologies | EasyPIM™ module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC/pre-applied Thermal Interface Material |
товар відсутній |
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FP25R12W2T4PB11BPSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 50A 20MW Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V |
товар відсутній |