FP75R12KT4PBPSA1 Infineon Technologies
Виробник: Infineon TechnologiesEasyPIM™ module with fast Trench/Fieldstop IGBT4 and Emitter Controlled4 diode and PressFIT/pre-applied Thermal Interface Material
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Технічний опис FP75R12KT4PBPSA1 Infineon Technologies
Description: IGBT MOD 1200V 150A 20MW, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V.
Інші пропозиції FP75R12KT4PBPSA1
| Фото | Назва | Виробник | Інформація |
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FP75R12KT4PBPSA1 | Виробник : Infineon Technologies |
EasyPIM™ module with fast Trench/Fieldstop IGBT4 and Emitter Controlled4 diode and PressFIT/pre-applied Thermal Interface Material |
товар відсутній |
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FP75R12KT4PBPSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 150A 20MW Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V |
товар відсутній |
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FP75R12KT4PBPSA1 | Виробник : Infineon Technologies |
IGBT Modules LOW POWER ECONO |
товар відсутній |