FQP8P10 onsemi
Виробник: onsemi
Description: MOSFET P-CH 100V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Description: MOSFET P-CH 100V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
на замовлення 2467 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 81.61 грн |
10+ | 70.17 грн |
100+ | 54.73 грн |
500+ | 42.43 грн |
1000+ | 33.5 грн |
2000+ | 31.27 грн |
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Технічний опис FQP8P10 onsemi
Description: MOSFET P-CH 100V 8A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V.
Інші пропозиції FQP8P10
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
FQP8P10 | Виробник : ON Semiconductor / Fairchild | MOSFET 100V P-Channel QFET |
на замовлення 2666 шт: термін постачання 21-30 дні (днів) |
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FQP8P10 | Виробник : ON Semiconductor | Trans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220 Tube |
товар відсутній |
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FQP8P10 | Виробник : ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -5.7A Pulsed drain current: -32A Power dissipation: 65W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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FQP8P10 | Виробник : ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -5.7A Pulsed drain current: -32A Power dissipation: 65W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |