на замовлення 135940 шт:
термін постачання 350-359 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.96 грн |
| 10+ | 57.66 грн |
| 100+ | 38.99 грн |
| 500+ | 33.05 грн |
| 1000+ | 26.37 грн |
| 2000+ | 24.84 грн |
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Технічний опис FQT1N80TF-WS onsemi / Fairchild
Description: MOSFET N-CH 800V 200MA SOT223-3, Packaging: Tape & Reel (TR), Package / Case: TO-261-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Tc), Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V, Power Dissipation (Max): 2.1W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V.
Інші пропозиції FQT1N80TF-WS
| Фото | Назва | Виробник | Інформація |
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FQT1N80TF-WS | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 800V 0.2A 4-Pin(3+Tab) SOT-223 T/R |
товар відсутній |
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FQT1N80TF-WS | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 0.12A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.12A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 20Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 4000 шт |
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FQT1N80TF-WS | Виробник : onsemi |
Description: MOSFET N-CH 800V 200MA SOT223-3 Packaging: Tape & Reel (TR) Package / Case: TO-261-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V Power Dissipation (Max): 2.1W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V |
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FQT1N80TF-WS | Виробник : onsemi |
Description: MOSFET N-CH 800V 200MA SOT223-3 Packaging: Cut Tape (CT) Package / Case: TO-261-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V Power Dissipation (Max): 2.1W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V |
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FQT1N80TF-WS | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 0.12A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.12A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 20Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |