FQU9N25TU Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 7
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, 7
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 6099 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
538+ | 36.87 грн |
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Технічний опис FQU9N25TU Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 7, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V, Power Dissipation (Max): 2.5W (Ta), 55W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: I-PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V.
Інші пропозиції FQU9N25TU
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FQU9N25TU | Виробник : ON Semiconductor / Fairchild | MOSFET 250V N-Channel QFET |
на замовлення 3843 шт: термін постачання 21-30 дні (днів) |
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FQU9N25TU | Виробник : ON Semiconductor | Trans MOSFET N-CH 250V 7.4A 3-Pin(3+Tab) IPAK Tube |
товар відсутній |
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FQU9N25TU | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.7A Pulsed drain current: 29.6A Power dissipation: 55W Case: IPAK Gate-source voltage: ±30V On-state resistance: 420mΩ Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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FQU9N25TU | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.7A Pulsed drain current: 29.6A Power dissipation: 55W Case: IPAK Gate-source voltage: ±30V On-state resistance: 420mΩ Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |