FZ800R12KE3HOSA1 Infineon Technologies
Виробник: Infineon TechnologiesTrans IGBT Module N-CH 1200V 800A 3550000mW Automotive 4-Pin 62MM-2 Tray
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Технічний опис FZ800R12KE3HOSA1 Infineon Technologies
Description: IGBT MOD 1200V 800A 3550W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 800A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 800 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 3550 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 56 nF @ 25 V.
Інші пропозиції FZ800R12KE3HOSA1
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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FZ800R12KE3HOSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 800A 3550W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 800A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Last Time Buy Current - Collector (Ic) (Max): 800 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 3550 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 56 nF @ 25 V |
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