G5S12008D Global Power Technology-GPT
Виробник: Global Power Technology-GPTDescription: DIODE SIL CARB 1.2KV 26.1A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 26.1A
Supplier Device Package: TO-263
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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Технічний опис G5S12008D Global Power Technology-GPT
Description: DIODE SIL CARB 1.2KV 26.1A TO263, Packaging: Tape & Box (TB), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 550pF @ 0V, 1MHz, Current - Average Rectified (Io): 26.1A, Supplier Device Package: TO-263, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.
Інші пропозиції G5S12008D
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G5S12008D | Виробник : Global Power Technology-GPT |
Description: DIODE SIL CARB 1.2KV 26.1A TO263 Packaging: Tape & Box (TB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 550pF @ 0V, 1MHz Current - Average Rectified (Io): 26.1A Supplier Device Package: TO-263 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
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