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G900P15K

G900P15K Goford Semiconductor

products-detail.php?ProId=740 Виробник: Goford Semiconductor
Description: MOSFET P-CH 150V 50A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
FET Feature: Standard
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3918 pF @ 75 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+37.89 грн
Мінімальне замовлення: 2500
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Технічний опис G900P15K Goford Semiconductor

Description: MOSFET P-CH 150V 50A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V, FET Feature: Standard, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3918 pF @ 75 V.

Інші пропозиції G900P15K за ціною від 39.81 грн до 100.13 грн

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
G900P15K G900P15K Виробник : Goford Semiconductor products-detail.php?ProId=740 Description: P-150V,-50A,RD(MAX)<80M@-10V,VTH
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
FET Feature: Standard
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3918 pF @ 75 V
на замовлення 2695 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+100.13 грн
10+ 79.01 грн
100+ 61.43 грн
500+ 48.87 грн
1000+ 39.81 грн
Мінімальне замовлення: 3
G900P15K G900P15K Виробник : Goford Semiconductor products-detail.php?ProId=740 Description: P-150V,-50A,RD(MAX)<80M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
FET Feature: Standard
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3918 pF @ 75 V
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