GA05JT12-263 GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: TRANS SJT 1200V 15A D2PAK
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Power Dissipation (Max): 106W (Tc)
Supplier Device Package: TO-263-7
Drain to Source Voltage (Vdss): 1200 V
Description: TRANS SJT 1200V 15A D2PAK
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Power Dissipation (Max): 106W (Tc)
Supplier Device Package: TO-263-7
Drain to Source Voltage (Vdss): 1200 V
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Технічний опис GA05JT12-263 GeneSiC Semiconductor
Description: TRANS SJT 1200V 15A D2PAK, Packaging: Tube, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Power Dissipation (Max): 106W (Tc), Supplier Device Package: TO-263-7, Drain to Source Voltage (Vdss): 1200 V.
Інші пропозиції GA05JT12-263
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
GA05JT12-263 | Виробник : GeneSiC Semiconductor | JFET 1200V 15A Standard |
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