GAN7R0-150LBEZ NEXPERIA
Виробник: NEXPERIA
Description: NEXPERIA - GAN7R0-150LBEZ - Galliumnitrid (GaN)-Transistor, 150 V, 28 A, 0.0056 ohm, 7.6 nC, FCLGA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 28A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 7.6nC
Bauform - Transistor: FCLGA
Anzahl der Pins: 3Pin(s)
Produktpalette: TUK SGACK902S Keystone Coupler
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.0056ohm
SVHC: No SVHC (23-Jan-2024)
Description: NEXPERIA - GAN7R0-150LBEZ - Galliumnitrid (GaN)-Transistor, 150 V, 28 A, 0.0056 ohm, 7.6 nC, FCLGA, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 28A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 7.6nC
Bauform - Transistor: FCLGA
Anzahl der Pins: 3Pin(s)
Produktpalette: TUK SGACK902S Keystone Coupler
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.0056ohm
SVHC: No SVHC (23-Jan-2024)
на замовлення 2086 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
100+ | 191.24 грн |
500+ | 174.81 грн |
1000+ | 158.16 грн |
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Технічний опис GAN7R0-150LBEZ NEXPERIA
Description: 150 V, 7 MOHM GALLIUM NITRIDE (G, Packaging: Tape & Reel (TR), Package / Case: 3-VLGA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A, Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 5V, Power Dissipation (Max): 28W, Vgs(th) (Max) @ Id: 2.1V @ 5mA, Supplier Device Package: 3-FCLGA (3.2x2.2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 85 V.
Інші пропозиції GAN7R0-150LBEZ за ціною від 120.87 грн до 258.61 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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GAN7R0-150LBEZ | Виробник : Nexperia | MOSFET MOS DISCRETES |
на замовлення 1148 шт: термін постачання 21-30 дні (днів) |
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GAN7R0-150LBEZ | Виробник : NEXPERIA |
Description: NEXPERIA - GAN7R0-150LBEZ - Galliumnitrid (GaN)-Transistor, 150 V, 28 A, 0.0056 ohm, 7.6 nC, FCLGA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 28A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 7.6nC Bauform - Transistor: FCLGA Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.0056ohm SVHC: No SVHC (23-Jan-2024) |
на замовлення 2086 шт: термін постачання 21-31 дні (днів) |
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GAN7R0-150LBEZ | Виробник : Nexperia USA Inc. |
Description: 150 V, 7 MOHM GALLIUM NITRIDE (G Packaging: Cut Tape (CT) Package / Case: 3-VLGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 5V Power Dissipation (Max): 28W Vgs(th) (Max) @ Id: 2.1V @ 5mA Supplier Device Package: 3-FCLGA (3.2x2.2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 85 V |
на замовлення 1593 шт: термін постачання 21-31 дні (днів) |
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GAN7R0-150LBEZ | Виробник : NEXPERIA | Trans MOSFET N-CH GaN 150V 28A T/R |
товар відсутній |
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GAN7R0-150LBEZ | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 150V Drain current: 28A Pulsed drain current: 120A Power dissipation: 28W Case: FCLGA3 Gate-source voltage: -4...6V On-state resistance: 7mΩ Mounting: SMD Gate charge: 7.6nC Kind of package: tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
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GAN7R0-150LBEZ | Виробник : Nexperia USA Inc. |
Description: 150 V, 7 MOHM GALLIUM NITRIDE (G Packaging: Tape & Reel (TR) Package / Case: 3-VLGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 5V Power Dissipation (Max): 28W Vgs(th) (Max) @ Id: 2.1V @ 5mA Supplier Device Package: 3-FCLGA (3.2x2.2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 85 V |
товар відсутній |
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GAN7R0-150LBEZ | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 150V Drain current: 28A Pulsed drain current: 120A Power dissipation: 28W Case: FCLGA3 Gate-source voltage: -4...6V On-state resistance: 7mΩ Mounting: SMD Gate charge: 7.6nC Kind of package: tape Kind of channel: enhanced |
товар відсутній |