GAS06520L Global Power Technology-GPT
Виробник: Global Power Technology-GPTDescription: DIODE SIC 650V 66.5A TO247AB
Packaging: Cut Tape (CT)
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1390pF @ 0V, 1MHz
Current - Average Rectified (Io): 66.5A
Supplier Device Package: TO-247AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
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Технічний опис GAS06520L Global Power Technology-GPT
Description: DIODE SIC 650V 66.5A TO247AB, Packaging: Tape & Box (TB), Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1390pF @ 0V, 1MHz, Current - Average Rectified (Io): 66.5A, Supplier Device Package: TO-247AB, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Інші пропозиції GAS06520L
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GAS06520L | Виробник : Global Power Technology-GPT |
Description: DIODE SIC 650V 66.5A TO247AB Packaging: Tape & Box (TB) Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1390pF @ 0V, 1MHz Current - Average Rectified (Io): 66.5A Supplier Device Package: TO-247AB Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
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