Технічний опис GBL10-M3/51 Vishay
Description: BRIDGE RECT 1PHASE 1KV 4A GBL, Packaging: Tray, Package / Case: 4-SIP, GBL, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBL, Voltage - Peak Reverse (Max): 1 kV, Current - Average Rectified (Io): 4 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
Інші пропозиції GBL10-M3/51
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| GBL10-M3/51 | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: BRIDGE RECT 1PHASE 1KV 4A GBLPackaging: Tray Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товар відсутній |
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| GBL10-M3/51 | Виробник : Vishay General Semiconductor |
Bridge Rectifiers 4A,1000V,GPP,INLINE BRIDGE |
товар відсутній |