GD200FFX65C6S STARPOWER SEMICONDUCTOR


Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
кількість в упаковці: 10 шт
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Технічний опис GD200FFX65C6S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Technology: Trench FS IGBT, Topology: IGBT three-phase bridge; NTC thermistor, Case: C6 62mm, Max. off-state voltage: 650V, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 400A, кількість в упаковці: 10 шт.

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GD200FFX65C6S Виробник : STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
товар відсутній