GD200FFY120C6S STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
кількість в упаковці: 10 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис GD200FFY120C6S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Technology: Advanced Trench FS IGBT, Topology: IGBT three-phase bridge; NTC thermistor, Case: C6 62mm, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 400A, кількість в упаковці: 10 шт.
Інші пропозиції GD200FFY120C6S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| GD200FFY120C6S | Виробник : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Case: C6 62mm Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A |
товар відсутній |