GD25LX256EFIRR GigaDevice Semiconductor (HK) Limited
Виробник: GigaDevice Semiconductor (HK) LimitedDescription: 256MBIT, 1.8V, SOP16 300MIL, IND
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOP
Part Status: Active
Write Cycle Time - Word, Page: 50µs, 1.2ms
Memory Interface: SPI - Octal I/O, DTR
Access Time: 6 ns
Memory Organization: 32M x 8
на замовлення 963 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 336.28 грн |
| 10+ | 295.59 грн |
| 25+ | 289.92 грн |
| 50+ | 270.12 грн |
| 100+ | 242.38 грн |
| 250+ | 241.46 грн |
| 500+ | 222.6 грн |
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Технічний опис GD25LX256EFIRR GigaDevice Semiconductor (HK) Limited
Description: 256MBIT, 1.8V, SOP16 300MIL, IND, Packaging: Tape & Reel (TR), Package / Case: 16-SOIC (0.295", 7.50mm Width), Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 2V, Technology: FLASH - NOR (SLC), Clock Frequency: 200 MHz, Memory Format: FLASH, Supplier Device Package: 16-SOP, Part Status: Active, Write Cycle Time - Word, Page: 50µs, 1.2ms, Memory Interface: SPI - Octal I/O, DTR, Access Time: 6 ns, Memory Organization: 32M x 8.
Інші пропозиції GD25LX256EFIRR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| GD25LX256EFIRR | Виробник : GigaDevice Semiconductor (HK) Limited |
Description: 256MBIT, 1.8V, SOP16 300MIL, IND Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 1.2ms Memory Interface: SPI - Octal I/O, DTR Access Time: 6 ns Memory Organization: 32M x 8 |
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