GD600HFX65C2S STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис GD600HFX65C2S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A, Type of module: IGBT, Semiconductor structure: transistor/transistor, Max. off-state voltage: 650V, Case: C2 62mm, Electrical mounting: FASTON connectors; screw, Topology: IGBT half-bridge, Mechanical mounting: screw, Collector current: 600A, Pulsed collector current: 1.2kA, Technology: Trench FS IGBT, Gate-emitter voltage: ±20V, кількість в упаковці: 12 шт.
Інші пропозиції GD600HFX65C2S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| GD600HFX65C2S | Виробник : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Case: C2 62mm Electrical mounting: FASTON connectors; screw Topology: IGBT half-bridge Mechanical mounting: screw Collector current: 600A Pulsed collector current: 1.2kA Technology: Trench FS IGBT Gate-emitter voltage: ±20V |
товар відсутній |