GD600HFX65C6S STARPOWER SEMICONDUCTOR


Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
кількість в упаковці: 10 шт
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Технічний опис GD600HFX65C6S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A, Type of module: IGBT, Semiconductor structure: transistor/transistor, Max. off-state voltage: 650V, Case: C6 62mm, Electrical mounting: Press-in PCB; screw, Topology: IGBT half-bridge, Mechanical mounting: screw, Collector current: 600A, Pulsed collector current: 1.2kA, Technology: Trench FS IGBT, Gate-emitter voltage: ±20V, кількість в упаковці: 10 шт.

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GD600HFX65C6S Виробник : STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Topology: IGBT half-bridge
Mechanical mounting: screw
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
товар відсутній