GPT65C0YME MGT BRIGHTEK
Виробник: MGT BRIGHTEK
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V; 6A
Type of transistor: N-JFET/N-MOSFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 31A
Power dissipation: 38W
Case: DFN8080
Gate-source voltage: ±20V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: tape
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V; 6A
Type of transistor: N-JFET/N-MOSFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 31A
Power dissipation: 38W
Case: DFN8080
Gate-source voltage: ±20V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: tape
кількість в упаковці: 2500 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис GPT65C0YME MGT BRIGHTEK
Category: SMD N channel transistors, Description: Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V; 6A, Type of transistor: N-JFET/N-MOSFET, Technology: GaN, Polarisation: unipolar, Kind of transistor: cascode; HEMT, Drain-source voltage: 650V, Drain current: 6A, Pulsed drain current: 31A, Power dissipation: 38W, Case: DFN8080, Gate-source voltage: ±20V, On-state resistance: 245mΩ, Mounting: SMD, Gate charge: 22nC, Kind of package: tape, кількість в упаковці: 2500 шт.
Інші пропозиції GPT65C0YME
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
GPT65C0YME | Виробник : MGT BRIGHTEK |
Category: SMD N channel transistors Description: Transistor: N-JFET/N-MOSFET; GaN; unipolar; HEMT,cascode; 650V; 6A Type of transistor: N-JFET/N-MOSFET Technology: GaN Polarisation: unipolar Kind of transistor: cascode; HEMT Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 31A Power dissipation: 38W Case: DFN8080 Gate-source voltage: ±20V On-state resistance: 245mΩ Mounting: SMD Gate charge: 22nC Kind of package: tape |
товар відсутній |