IAUCN04S7L009ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 275A (Tj)
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 88A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 60µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5704 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 275A (Tj)
Rds On (Max) @ Id, Vgs: 0.91mOhm @ 88A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 60µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5704 pF @ 20 V
Qualification: AEC-Q101
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 124.31 грн |
10+ | 107.18 грн |
25+ | 101.19 грн |
100+ | 80.9 грн |
250+ | 75.96 грн |
500+ | 66.46 грн |
Відгуки про товар
Написати відгук
Технічний опис IAUCN04S7L009ATMA1 Infineon Technologies
Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 275A (Tj), Rds On (Max) @ Id, Vgs: 0.91mOhm @ 88A, 10V, Power Dissipation (Max): 129W (Tc), Vgs(th) (Max) @ Id: 1.8V @ 60µA, Supplier Device Package: PG-TDSON-8-34, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5704 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції IAUCN04S7L009ATMA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
IAUCN04S7L009ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 275A (Tj) Rds On (Max) @ Id, Vgs: 0.91mOhm @ 88A, 10V Power Dissipation (Max): 129W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 60µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5704 pF @ 20 V Qualification: AEC-Q101 |
товар відсутній |