IAUZ40N10S5L120ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V
на замовлення 4665 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 93.41 грн |
| 10+ | 73.76 грн |
| 100+ | 57.38 грн |
| 500+ | 45.65 грн |
| 1000+ | 37.18 грн |
| 2000+ | 35 грн |
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Технічний опис IAUZ40N10S5L120ATMA1 Infineon Technologies
Description: MOSFET_(75V 120V( PG-TSDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tj), Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 27µA, Supplier Device Package: PG-TSDSON-8-33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V.
Інші пропозиції IAUZ40N10S5L120ATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IAUZ40N10S5L120ATMA1 | Виробник : Infineon Technologies |
SP005423087 |
товар відсутній |
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| IAUZ40N10S5L120ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 9A Pulsed drain current: 160A Power dissipation: 62W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 18.5mΩ Mounting: SMD Gate charge: 22.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
товар відсутній |
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| IAUZ40N10S5L120ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET_(75V 120V( PG-TSDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tj) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 27µA Supplier Device Package: PG-TSDSON-8-33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V |
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IAUZ40N10S5L120ATMA1 | Виробник : Infineon Technologies |
MOSFET MOSFET_(75V 120V( |
товар відсутній |
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| IAUZ40N10S5L120ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 160A; 62W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 9A Pulsed drain current: 160A Power dissipation: 62W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 18.5mΩ Mounting: SMD Gate charge: 22.6nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |